Structural Changes in a Single GaN Nanowire under Applied Voltage Bias
نویسندگان
چکیده
منابع مشابه
Effect of bias voltage on structural and mechanical characteristics of diamond-like carbon thin film applied by ion beam deposition
This study, investigates the effect of bias voltage on structural changes of diamond-like carbon thin film created by ion beam deposition is investigated. For this purpose, the bias voltage in the values of 0 V, -50 V, -100 V and -150 V on the AA5083 aluminum alloy was considered. Raman spectroscopy was used to evaluate structural. Influence of the bias voltage on the thickness and roughness of...
متن کاملIon fluxes and electro-osmotic fluid flow in electrolytes around a metallic nanowire tip under large applied ac voltage.
Motivated by the analysis of electrochemical growth of metallic nanowires from solution, we studied ion fluxes near nanoelectrodes in a binary symmetric electrolyte on the basis of the modified Poisson-Nernst-Planck equations in the strongly nonlinear region at large applied ac voltage. For an approximate calculation of the electric field near the nanowire tip, concentric spherical blocking ele...
متن کاملPolarization control in GaN nanowire lasers.
We demonstrate polarization control in optically-pumped single GaN nanowire lasers fabricated by a top-down method. By placing the GaN nanowires onto gold substrates, the naturally occurring randomly orientated elliptical polarization of nanowire lasers is converted to a linear polarization that is oriented parallel to the substrate surface. Confirmed by simulation results, this polarization co...
متن کاملElectrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire.
In a classical light source, such as a laser, the photon number follows a Poissonian distribution. For quantum information processing and metrology applications, a non-classical emitter of single photons is required. A single quantum dot is an ideal source of single photons and such single-photon sources in the visible spectral range have been demonstrated with III-nitride and II-VI-based singl...
متن کاملSelf-assembled GaN quantum wires on GaN/AlN nanowire templates.
We present a novel approach for self-assembled growth of GaN quantum wires (QWRs) exhibiting strong confinement in two spatial dimensions. The GaN QWRs are formed by selective nucleation on {112[combining macron]0} (a-plane) facets formed at the six intersections of {11[combining macron]00} (m-plane) sidewalls of AlN/GaN nanowires used as a template. Based on microscopy observations we have dev...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nano Letters
سال: 2018
ISSN: 1530-6984,1530-6992
DOI: 10.1021/acs.nanolett.8b01802